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| savantic semiconductor product specification silicon pnp power transistors 2SA1043 description with to-3 package high transition frequency excellent safe operating area applications power switching applications high frequency power amplifier switching regulators dc-dc converters pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -120 v v ceo collector-emitter voltage open base -120 v v ebo emitter-base voltage open collector -7 v i c collector current -30 a p c collector power dissipation t c =25 150 w t j junction temperature 175 t stg storage temperature -55~200 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1043 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma ;i b =0 -120 v v (br)cbo collector-base breakdown voltage i c =-0.1ma ;i e =0 -120 v v (br)ebo emitter-base breakdown voltage i e =-0.1ma ;i c =0 -7 v v cesat collector-emitter saturation voltage i c =-15a; i b =-1.5a -1.5 v v besat base-emitter saturation voltage i c =-15a; i b =-1.5a -2.0 v i cbo collector cut-off current v cb =-120v; i e =0 -50 a i ebo emitter cut-off current v eb =-7v; i c =0 -50 a h fe dc current gain i c =-3a ; v ce =-5v 35 200 c ob output capacitance i e =0 ; v cb =-10v;f=1.0mhz 600 pf f t transition frequency i c =-2a ; v ce =-10v 60 mhz savantic semiconductor product specification 3 silicon pnp power transistors 2SA1043 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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